Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free. Description. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
10 www.irf.com Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04 Dimensions are shown in millimeters (inches)
IRF520. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
IRF520 Datasheet (PDF) - STMicroelectronics
IRF520 Product details. N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS. TYPICAL RDS (on) = 0.23 Ω. AVALANCHE RUGGED TECHNOLOGY. 100% AVALANCHE TESTED. REPETITIVE AVALANCHE DATA AT 100°C. LOW GATE CHARGE.
DATE CODE (YYWW) YY = YEAR WW = WEEK. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331. EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR …
IRF520N - Infineon Technologies
Planar cell structure for wide SOA. Optimized for broadest availability from distribution partners. Product qualification according to JEDEC standard. Silicon optimized for applications switching below <100kHz. Industry standard surface-mount power package.
IRF520 MOSFETs | Vishay
IRF520. Power MOSFET. General Information. General Information. Useful Web Links. Markings. Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High Voltage) Packaging Information.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
IRF520 Datasheet (PDF) - Intersil Corporation
IRF520 Product details. This N-Channel enhancement mode silicon gate power field. effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111.