IRF520 Datasheet(PDF) - STMicroelectronics
Part #: IRF520. Download. File Size: 181Kbytes. Page: 9 Pages. Description: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS. Manufacturer: STMicroelectronics.
FEATURES. * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.
IRF520 Datasheet (PDF) - Fairchild Semiconductor
IRF520 Product details. These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • bss. Vos (on), Specified at Elevated Temperature.
IRF520N Datasheet (PDF) - International Rectifier
IRF520N Product details. Description. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ...
IRF520 MOSFET Pinout, Datasheet, Features & Alternatives
2019年1月12日 · The IRF520 is a Power Mosfet with 9.2A collector current and 100V breakdown voltage. The mosfet has a low gate threshold voltage of 4V and hence commonly used with microcontrollers like Arduino for switching high current loads.
IRF520 MOSFETs | Vishay
IRF520 PRODUCT INFORMATION. Power MOSFET. FEATURES. Dynamic dV/dt rating. Repetitive avalanche rated. 175 °C operating temperature. Datasheet. Request Sample. Buy Now. Disclaimer: Please carefully read the disclaimer below before proceeding and before using this data. Your use of this data constitutes your acceptance of the terms and ...
IRF520. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance.
IRF520 by STMicroelectronics Datasheet | DigiKey
View IRF520 by STMicroelectronics datasheet for technical specifications, dimensions and more at DigiKey.
IRF520 STMicroelectronics | Mouser
5 天之前 · IRF520 STMicroelectronics MOSFETs N-Ch 100 Volt 10 Amp datasheet, inventory, & pricing.